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RMPA0966 i-LoTM Cellular CDMA, CDMA2000-1X and WCDMA Power Amplifier Module (Preliminary)
PRELIMINARY
November 2005
RMPA0966 i-LoTM Cellular CDMA, CDMA2000-1X and WCDMA Power Amplifier Module
Features
42% CDMA/WCDMA efficiency at +28 dBm Pout 21% CDMA/WCDMA efficiency (56 mA total current) at +16 dBm Pout Meets HSDPA performance requirements 50% AMPS mode efficiency at +31 dBm Pout Low quiescent current (Iccq): 15 mA in low-power mode Single positive-supply operation with low power and shutdown modes * 3.4V typical Vcc operation * Low Vref (2.85V) compatible with advanced handset chipsets Compact Lead-free compliant LCC package - (4.0 X 4.0 x 1.0 mm nominal) Industry standard pinout Internally matched to 50 Ohms and DC blocked RF input/output Meets IS-95/CDMA2000-1XRTT/WCDMA performance requirements
General Description
The RMPA0966 Power Amplifier Module (PAM) is Fairchild's latest innovation in 50 Ohm matched, surface mount modules targeting Cellular CDMA/WCDMA/HSDPA, AMPS and Wireless Local Loop (WLL) applications. Answering the call for ultra-low DC power consumption and extended battery life in portable electronics, the RMPA0966 uses novel proprietary circuitry to dramatically reduce amplifier current at low to medium RF output power levels (<+16 dBm), where the handset most often operates. A simple two-state Vmode control is all that is needed to reduce operating current by more than 60% at 16 dBm output power, and quiescent current (Iccq) by as much as 70% compared to traditional power-saving methods. No additional circuitry, such as DC-to-DC converters, are required to achieve this remarkable improvement in amplifier efficiency. Further, the 4x4x1.0 mm LCC package is pin-compatible and a drop-in replacement for last generation 4x4 mm PAMs widely used today, minimizing the design time to apply this performanceenhancing technology. The multi-stage GaAs Microwave Monolithic Integrated Circuit (MMIC) is manufactured using Fairchild RF's InGaP Heterojunction Bipolar Transistor (HBT) process.
Device
Functional Block Diagram
(Top View) MMIC
Vref 1 Vmode 2 3 4 5 INPUT MATCH BIAS/MODE SWITCH OUTPUT MATCH
10 GND 9 8 GND RF OUT
GND RF IN Vcc1
7 GND 6 Vcc2
11 (paddle ground on package bottom)
(c)2005 Fairchild Semiconductor Corporation
1
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RMPA0966 i-LoTM Rev. A
RMPA0966 i-LoTM Cellular CDMA, CDMA2000-1X and WCDMA Power Amplifier Module (Preliminary)
Absolute Maximum Ratings1
Symbol
Vcc1, Vcc2 Vref Vmode Pin Tstg Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature
Parameter
Value
5.0 2.6 to 3.5 3.5 +10 -55 to +150
Units
V V V dBm C
Note: 1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics1
Symbol
f Gp Po PAEd Itot CDMA ACPR1 ACPR2 WCDMA ACLR1 ACLR2
Parameter
Operating Frequency Power Gain Linear Output Power PAEd (digital) @ +28dBm PAEd (digital) @ +16dBm High Power Total Current Low Power Total Current Adjacent Channel Power Ratio 885KHz Offset 1.98MHz Offset Adjacent Channel Leakage Ratio 5MHz Offset 10MHz Offset
Min
824
Typ
Max
849
Units
MHz dB dB dBm dBm
Comments
CDMA/WCDMA Operation 30 20 28 16 42 21 440 56 -50 -55 -60 -65 Po=+28 dBm; Vmode=0V Po=+16 dBm; Vmode2.0V Vmode=0V Vmode2.0V Vmode=0V Vmode2.0V Po=+28 dBm, Vmode=0V Po=+16 dBm, Vmode2.0V IS-95 A/B Modulation dBc dBc dBc dBc Po=+28 dBm; Vmode=0V Po=+16 dBm; Vmode2.0V Po=+28 dBm; Vmode=0V Po=+16 dBm; Vmode2.0V WCDMA Modulation 3GPP 3.2 03-00 DPCCH +1 DCDCH -40 -45 -53 -60 29 50 2.0:1 4 -134 -30 -60 10:1 -30 15 2 1 5 85 C mA mA A Vmode2.0V Po+28 dBm No applied RF signal 2.5:1 dB dBm/Hz dBc dBc Po+28 dBm; 869 to 894MHz Po+28 dBm Load VSWR5.0:1 No permanent damage. dBc dBc dBc dBc dB % Po=+28 dBm; Vmode=0V Po=+16 dBm; Vmode2.0V Po=+28 dBm; Vmode=0V Po=+16 dBm; Vmode2.0V Po=+31 dBm Po=+31 dBm
% % mA mA
AMPS Operation Gp PAEa VSWR NF Rx No 2fo-5fo S Tc Iccq Iref Icc(off) Power Gain Power-Added Efficiency (analog) Input Impedance Noise Figure Receive Band Noise Power Harmonic Suppression3 Spurious Outputs2,3 Ruggedness w/ Load Mismatch3 Case Operating Temperature Quiescent Current Reference Current Shutdown Leakage Current DC Characteristics
General Characteristics
Notes: 1. All parameters met at Tc = +25C, Vcc = +3.4V, Vref = 2.85V and load VSWR 1.2:1, unless otherwise noted. 2. All phase angles. 3. Guaranteed by design.
2 RMPA0966 i-LoTM Rev. A
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RMPA0966 i-LoTM Cellular CDMA, CDMA2000-1X and WCDMA Power Amplifier Module (Preliminary)
Recommended Operating Conditions
Symbol
f Vcc1, Vcc2 Vref Supply Voltage Reference Voltage (Operating) (Shutdown) Bias Control Voltage (Low-Power) (High-Power) Linear Output Power (High-Power) (Low-Power) Case Operating Temperature -30
Parameter
Operating Frequency
Min
824 3.0 2.7 0 1.8 0
Typ
3.4 2.85
Max
849 4.2 3.1 0.5 3.0 0.5 +28
Units
MHz V V V V V dBm dBm C
Vmode
2.0
Pout
+16 +85
Tc
DC Turn-On Sequence
1) Vcc1 = Vcc2 = 3.4V (typical) 2) Vref = 2.85V (typical) 3) High-Power: Vmode = 0V (Pout > 16 dBm) Low-Power: Vmode = 2V (Pout < 16 dBm)
3 RMPA0966 i-LoTM Rev. A
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RMPA0966 i-LoTM Cellular CDMA, CDMA2000-1X and WCDMA Power Amplifier Module (Preliminary)
Evaluation Board Layout
1 4 5 3 7
2
0966
XYTT
Z
5 6
8 6
Materials List
Qty
1 2 8 Ref 2 2 2 1 1 1 A/R A/R
Item No.
1 2 3 4 5 5 (Alt) 6 7 7 (Alt) 8 9 10
Part Number
G657549-1 V2 #142-0701-841 #2340-5211TN GRM39X7R102K50V ECJ-1VB1H102K C3216X5R1A335M GRM39Y5V104Z16V ECJ-1VB1C104K GRM39X7R331K50V SN63 SN96 PC Board
Description
SMA Connector Terminals Assembly, RMPA0966 1000pF Capacitor (0603) 1000pF Capacitor (0603) 3.3F Capacitor (1206) 0.1F Capacitor (0603) 0.1F Capacitor (0603) 330pF Capacitor (0603) Solder Paste Solder Paste
Vendor
Fairchild Johnson 3M Fairchild Murata Panasonic TDK Murata Panasonic Murata Indium Corp. Indium Corp.
Evaluation Board Schematic
0.1 F 1000 pF Vmode 50 Ohm TRL Vcc1 3.3 F Vref
1 2 4 5 11 3,7,9,10
0966
XYTT
8
50 Ohm TRL
SMA1 RF IN
SMA2 RF OUT Vcc2
1000 pF
330 pF (package base)
4 RMPA0966 i-LoTM Rev. A
Z
6
3.3 F
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RMPA0966 i-LoTM Cellular CDMA, CDMA2000-1X and WCDMA Power Amplifier Module (Preliminary)
Package Outline
I/O 1 INDICATOR TOP VIEW 1 2 10 9 8
0966
XYTT
(4.00mm +.100 ) SQUARE -.050
3 4 5
6
1.1mm MAX. FRONT VIEW .25mm TYP. 3.50mm TYP. See Detail A .40mm .30mm TYP. .85mm TYP. 11 2 1 1.08mm 1.84mm BOTTOM VIEW .18mm DETAIL A. TYP. 3.65mm .10mm .10mm .40mm .45mm
Signal Descriptions
Pin #
1 2 3 4 5 6 7 8 9 10 11
Signal Name
Vref Vmode GND RF In Vcc1 Vcc2 GND RF Out GND GND GND
Description
Reference Voltage High Power/Low Power Mode Control Ground RF Input Signal Supply Voltage to Input Stage Supply Voltage to Output Stage Ground RF Output Signal Ground Ground Paddle Ground
5 RMPA0966 i-LoTM Rev. A
ZT T XY 9 6 6
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0
Z
7
RMPA0966 i-LoTM Cellular CDMA, CDMA2000-1X and WCDMA Power Amplifier Module (Preliminary)
Applications Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Precautions to Avoid Permanent Device Damage: * Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC and ground contact areas. * Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. * Static Sensitivity: Follow ESD precautions to protect against ESD damage: - A properly grounded static-dissipative surface on which to place devices. - Static-dissipative floor or mat. - A properly grounded conductive wrist strap for each person to wear while handling devices. * General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. * Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. Device Usage: Fairchild recommends the following procedures prior to assembly. * Assemble the devices within 7 days of removal from the dry pack. * During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30C * If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure, at 125C for 24 hours minimum, must be performed. Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. Reflow Profile * Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A maximum heating rate is 3C/sec. * Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 60-180 seconds at 150-200C. * Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 20 seconds. Soldering temperatures should be in the range 255-260C, with a maximum limit of 260C. * Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the heat sink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should be subjected to no more than 15C above the solder melting temperature for no more than 5 seconds. No more than 2 rework operations should be performed.
Recommended Solder Reflow Profile
260
Ramp-Up Rate 3 C/sec max
Peak temp 260 +0/-5 C 10 - 20 sec
Temperature (C)
217 200
Time above liquidus temp 60 - 150 sec
150
Preheat, 150 to 200 C 60 - 180 sec
100
Ramp-Up Rate 3 C/sec max
50 25
Time 25 C/sec to peak temp 6 minutes max
Ramp-Down Rate 6 C/sec max
Time (Sec)
6 RMPA0966 i-LoTM Rev. A
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RMPA0966 i-LoTM Cellular CDMA, CDMA2000-1X and WCDMA Power Amplifier Module (Preliminary)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM
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POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM
SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I15
7 RMPA0966 i-LoTM Rev. A
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